PART |
Description |
Maker |
NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC] NEC Corp. NEC, Corp.
|
2SK3391JXTL-E 2SK339107 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
2SK2596BX 2SK2596 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
2SK3390 |
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
2SK2595 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
2SK3390 |
Silicon N Channel MOS FET UHF Power Amplifier
|
http:// HITACHI[Hitachi Semiconductor]
|
MHW2821D |
MHW2821 Technical Data Sheet UHF Silicon FET Power Amplifiers
|
Motorola
|
2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor Sanyo Semicon Device
|
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
3SK319YB-TL-E 3SK319 |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
D2089UK D2089 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SEME-LAB[Seme LAB] TT electronics Semelab, Ltd.
|